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BSM300GA120DN2E3166
IGBT Power Module Preliminary data * Single switch * Including fast free-wheeling diodes * Enlarged diode area * Package with insulated metal base plate Type BSM300GA120DN2E3166 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V
VCE
IC
Package SINGLE SWITCH 1
Ordering Code C67070-A2007-A70
1200V 430A
VCE VCGR VGE IC
RGE = 20 k
Gate-emitter voltage DC collector current
20 A 430 300
TC = 25 C TC = 80 C
Pulsed collector current, tp = 1 ms
ICpuls
860 600
TC = 25 C TC = 80 C
Power dissipation per IGBT
Ptot
2500
W + 150 -55 ... + 150 0.05 0.065 2500 20 11 F 55 / 150 / 56 Vac mm K/W C
TC = 25 C
Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJCD Vis
-
Semiconductor Group
1
Mar-29-1996
BSM300GA120DN2E3166
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.5 3.1 4 16 6.5 3 3.7
V
VGE = VCE, IC = 12 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 300 A, Tj = 25 C VGE = 15 V, IC = 300 A, Tj = 125 C
Zero gate voltage collector current
ICES
5.6 -
mA
VCE = 1200 V, VGE = 0 V, Tj = 25 C VCE = 1200 V, VGE = 0 V, Tj = 125 C
Gate-emitter leakage current
IGES
320
nA
VGE = 20 V, VCE = 0 V
AC Characteristics Transconductance
gfs
124 22 3.3 1.2 -
S nF -
VCE = 20 V, IC = 300 A
Input capacitance
Ciss Coss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Semiconductor Group
2
Mar-29-1996
BSM300GA120DN2E3166
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time Values typ. max. Unit
td(on)
100 200
ns
VCC = 600 V, VGE = 15 V, IC = 300 A RGon = 3.3
Rise time
tr
110 220
VCC = 600 V, VGE = 15 V, IC = 300 A RGon = 3.3
Turn-off delay time
td(off)
600 800
VCC = 600 V, VGE = -15 V, IC = 300 A RGoff = 3.3
Fall time
tf
80 120
VCC = 600 V, VGE = -15 V, IC = 300 A RGoff = 3.3
Free-Wheel Diode Diode forward voltage
VF
1.4 1.8 1.35 2.3 -
V
IF = 300 A, VGE = 0 V, Tj = 25 C IF = 300 A, VGE = 0 V, Tj = 125 C
Reverse recovery time
trr
0.6 -
s
IF = 300 A, VR = -600 V, VGE = 0 V diF/dt = -2500 A/s, Tj = 125 C
Reverse recovery charge
Qrr
C
IF = 300 A, VR = -600 V, VGE = 0 V diF/dt = -2500 A/s Tj = 25 C Tj = 125 C
16 45 -
Semiconductor Group
3
Mar-29-1996
BSM300GA120DN2E3166
Power dissipation Ptot = (TC) parameter: Tj 150 C
2600 W 2200
Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C
10 4
A
Ptot
2000 1800 1600
IC
10 3
tp = 19.0s
100 s
1400 1200 1000 800
10
2
1 ms
10 1 600 400 200 0 0 20 40 60 80 100 120 C 160 10 0 0 10 10
1
10 ms
DC 10
2
10
3
V
TC
VCE
Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C
500 A
Transient thermal impedance Zth JC = (tp) parameter: D = tp / T
10 0 K/W 10 -1
IGBT
IC
400 350 300 250 200 150 100 50 0 0
ZthJC
10 -2
D = 0.50 10
-3
0.20 0.10 0.05 single pulse
10 -4
0.02 0.01
20
40
60
80
100
120
C
160
10 -5 -5 10
10
-4
10
-3
10
-2
10
-1
s 10
0
TC
tp
Semiconductor Group
4
Mar-29-1996
BSM300GA120DN2E3166
Typ. output characteristics
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 s, Tj = 25 C
600 A 500 17V 15V 13V 11V 9V 7V
IC = f (VCE)
parameter: tp = 80 s, Tj = 125 C
600 A 500 17V 15V 13V 11V 9V 7V
IC
450 400 350 300 250 200 150 100 50 0 0
IC
450 400 350 300 250 200 150 100 50
1
2
3
V
5
0 0
1
2
3
V
5
VCE
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 s, VCE = 20 V
600 A 500
IC
450 400 350 300 250 200 150 100 50 0 0 2 4 6 8 10 V 14 VGE
Semiconductor Group
5
Mar-29-1996
BSM300GA120DN2E3166
Typ. gate charge VGE = (QGate) parameter: IC puls = 300 A
20 V
Typ. capacitances
C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz
10 2
nF
VGE
16 14 12 10 8
C
Ciss 10 1
600 V
800 V
Coss
10 0 6 4 2 0 0 10 -1 0
Crss
200 400 600 800 1000120014001600 nC 2000
5
10
15
20
25
30
QGate
V 40 VCE
Reverse biased safe operating area
Short circuit safe operating area
ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V
2.5
ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 20 nH
12
ICpuls/IC
ICsc/IC
8 1.5 6 1.0 4
0.5 2
0.0 0 200 400 600 800 1000 1200 V 1600 VCE
0 0 200 400 600 800 1000 1200 V 1600 VCE
Semiconductor Group
6
Mar-29-1996
BSM300GA120DN2E3166
Typ. switching time
Typ. switching time
I = f (IC) , inductive load , Tj = 125C
par.: VCE = 600 V, VGE = 15 V, RG = 3.3
10 4
t = f (RG) , inductive load , Tj = 125C
par.: VCE = 600 V, VGE = 15 V, IC = 300 A
10 4
ns t 10 3 tdoff t
ns
tdoff
10 3
tdon tr tr tdon tf
10 2
10 2
tf
10 1 0
100
200
300
400
500
A IC
700
10 1 0
5
10
15
20
25
30
40
RG
Typ. switching losses
Typ. switching losses
E = f (IC) , inductive load , Tj = 125C
par.: VCE = 600 V, VGE = 15 V, RG = 3.3
140
E = f (RG) , inductive load , Tj = 125C
par.: VCE = 600V, VGE = 15 V, IC = 300 A
140 Eon
mWs E 100
Eon E
mWs
100
80 Eoff
80
Eoff
60
60
40
40
20
20
0 0
100
200
300
400
500
A IC
700
0 0
5
10
15
20
25
30
40
RG
Semiconductor Group
7
Mar-29-1996
BSM300GA120DN2E3166
Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj
600 A 500
Transient thermal impedance Zth JC = (tp) parameter: D = tp / T
10 0
Diode
Tj=125C
Tj=25C ZthJC
K/W
IF
450 400 350 300 250 200 150 100 50 0 0.0 0.5 1.0 1.5 2.0 V 3.0
10 -1
10 -2 D = 0.50 0.20 0.10 10 -3 single pulse 0.05 0.02 0.01
10 -4 -5 10
10
-4
10
-3
10
-2
10
-1
s 10
0
VF
tp
Semiconductor Group
8
Mar-29-1996
BSM300GA120DN2E3166
Circuit Diagram
Package Outlines Dimensions in mm Weight: 420 g
Semiconductor Group
9
Mar-29-1996

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